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KHB6D0N40P 반도체 회로 부품 판매점

(KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs



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KEC semiconductor
KHB6D0N40P 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SEMICONDUCTOR
TECHNICAL DATA
KHB6D0N40P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS=400V, ID=6.0A
Drain-Source ON Resistance :
RDS(ON)=1.0 @VGS=10V
Qg(typ.)=32nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB6D0N40P KHB6D0N40F
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
6.0 6.0*
3.6 3.6*
24 24*
450
9.2
4.5
73 38
0.74 0.3
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.71
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.31 /W
- /W
62.5 /W
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
2005. 12. 15
Revision No : 2
G
S
1/7


KHB6D0N40P 데이터시트, 핀배열, 회로
www.DataSheet4U.com
KHB6D0N40P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=400V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=3A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Crss
Coss
VDS=320V, ID=6A
VGS=10V
(Note4,5)
VDD=200V
RL=33
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=6A, VGS=0V
trr IS=6A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =13.7mH, IS=6A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 6A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
400 - - V
- 0.54 - V/
--1 A
2.0 - 4.0 V
- - 100 nA
- 0.83 1
- 32 42
- 6 - nC
- 14 -
- - 38
- - 140
ns
- - 55
- - 85
- - 1220
- - 32 pF
- - 130
- -6
A
- - 24
- - 1.5 V
- 260 -
ns
- 1.3 -
C
2005. 12. 15
Revision No : 2
2/7




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(KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs - KEC semiconductor



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(KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs - KEC semiconductor