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International Rectifier |
www.DataSheet4U.com
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)*
PD - 91644A
IRL1004S
IRL1004L
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.0065Ω
ID = 130A
S
D2Pak
IRL1004S
TO-262
IRL1004L
Max.
130
92
520
3.8
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/29/99
IRL1004S/1004L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.0065
––– ––– 0.009 Ω
VGS = 10V, ID = 78A
VGS = 4.5V, ID = 65A
1.0 –––
V VDS = VGS, ID = 250µA
63 ––– ––– S VDS = 25V, ID = 78A
––– ––– 25 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 32V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 100
––– ––– 32
––– ––– 43
––– 16 –––
ID = 78A
nC VDS = 32V
VGS = 4.5V, See Fig. 6 and 13
VDD = 20V,
––– 210 –––
ID = 78A,
––– 25 ––– ns RG = 2.5Ω,
––– 14 –––
RD = 0.18Ω, See Fig. 10
––– 7.5 ––– nH Between lead,
and center of die contact
––– 5330 –––
VGS = 0V
––– 1480 ––– pF VDS = 25V
––– 320 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 130
––– ––– 520
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 78A, VGS = 0V
––– 78 120 ns TJ = 25°C, IF = 78A
––– 180 270 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.23mH
RG = 25Ω, IAS = 78A. (See Figure 12)
ISD ≤ 78A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4
Uses IRL1004 data and test conditions
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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