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Número de pieza | IRFP150VPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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PD - 95515
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
IRFP150VPbF
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 24mΩ
G
ID = 47A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 packcage because of its isolated
mounting hole.
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
46
32
230
140
0.91
± 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.24
–––
Max.
1.1
–––
40
Units
°C/W
1
07/07/04
1 page 50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFP150VPbF
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFP150VPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFP150VPBF | Power MOSFET ( Transistor ) | International Rectifier |
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