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International Rectifier |
www.DataSheet4U.com
PRELIMINARY
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
G
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD 9.1675B
IRL3202S
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.016W
ID = 48A
S
D 2Pak
Max.
48
30
190
69
0.56
± 10
14
270
29
6.9
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.8
40
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/97
IRL3202S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.019
––– ––– 0.016 W
VGS = 4.5V, ID = 29A
VGS = 7.0V, ID = 29A
0.70 ––– ––– V VDS = VGS, ID = 250µA
28 ––– ––– S VDS = 16V, ID = 29A
––– ––– 25
––– ––– 250
µA VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 10V
––– ––– -100
VGS = -10V
––– ––– 43
ID = 29A
––– ––– 12 nC VDS = 16V
––– ––– 13
VGS = 4.5V, See Fig. 6
––– 9.8 –––
VDD = 10V
––– 100 –––
––– 63 –––
––– 82 –––
ns ID = 29A
RG = 9.5W, VGS = 4.5V
RD = 0.3W,
––– 7.5 –––
Between lead,
nH and center of die contact
––– 2000 –––
VGS = 0V
––– 800 ––– pF VDS = 15V
––– 290 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 48
A showing the
integral reverse
––– ––– 190
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
––– 68 100 ns TJ = 25°C, IF = 29A
––– 130 190 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.64mH
RG = 25W , IAS = 29A.
ISD £ 29A, di/dt £ 63A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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