파트넘버.co.kr IRL3202S 데이터시트 PDF


IRL3202S 반도체 회로 부품 판매점

HEXFET Power MOSFET



International Rectifier 로고
International Rectifier
IRL3202S 데이터시트, 핀배열, 회로
www.DataSheet4U.com
PRELIMINARY
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
G
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V…
Continuous Drain Current, VGS @ 4.5V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RqJC
RqJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD 9.1675B
IRL3202S
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.016W
ID = 48A
S
D 2Pak
Max.
48
30
190
69
0.56
± 10
14
270
29
6.9
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.8
40
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/97


IRL3202S 데이터시트, 핀배열, 회로
IRL3202S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.019
––– ––– 0.016 W
VGS = 4.5V, ID = 29A „
VGS = 7.0V, ID = 29A „
0.70 ––– ––– V VDS = VGS, ID = 250µA
28 ––– ––– S VDS = 16V, ID = 29A…
––– ––– 25
––– ––– 250
µA VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 10V
––– ––– -100
VGS = -10V
––– ––– 43
ID = 29A
––– ––– 12 nC VDS = 16V
––– ––– 13
VGS = 4.5V, See Fig. 6 „…
––– 9.8 –––
VDD = 10V
––– 100 –––
––– 63 –––
––– 82 –––
ns ID = 29A
RG = 9.5W, VGS = 4.5V
RD = 0.3W, „…
––– 7.5 –––
Between lead,
nH and center of die contact
––– 2000 –––
VGS = 0V
––– 800 ––– pF VDS = 15V
––– 290 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 48
A showing the
integral reverse
––– ––– 190
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „
––– 68 100 ns TJ = 25°C, IF = 29A
––– 130 190 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.64mH
RG = 25W , IAS = 29A.
ƒ ISD £ 29A, di/dt £ 63A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
„ Pulse width £ 300µs; duty cycle £ 2%.
… Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.




PDF 파일 내의 페이지 : 총 8 페이지

제조업체: International Rectifier

( ir )

IRL3202S mosfet

데이터시트 다운로드
:

[ IRL3202S.PDF ]

[ IRL3202S 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


IRL3202

HEXFET Power MOSFET - International Rectifier



IRL3202PBF

Power MOSFET ( Transistor ) - International Rectifier



IRL3202S

HEXFET Power MOSFET - International Rectifier