파트넘버.co.kr FDD4685 데이터시트 PDF


FDD4685 반도체 회로 부품 판매점

P-Channel PowerTrench MOSFET



Fairchild Semiconductor 로고
Fairchild Semiconductor
FDD4685 데이터시트, 핀배열, 회로
www.DataSheet4U.com
FDD4685
40V P-Channel PowerTrench® MOSFET
40V, 32A, 27m
Features
General Description
October 2006
tm
„ Max rDS(on) = 27mat VGS = –10V, ID = –8.4A
„ Max rDS(on) = 35mat VGS = –4.5V, ID = –7A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering
superior performance in application.
Application
„ Inverter
„ Power Supplies
G
S
D
DT O- P-2A5K2
(T O -25 2)
S
G
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
ID
-Continuous(Silicon Limited)
-Continuous
-Pulsed
EAS Drain-Source Avalanche Energy
PD
Power Dissipation
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
TC= 25°C
TC= 25°C
TA= 25°C
TC= 25°C
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
–40
±20
–32
–40
–8.4
–100
121
69
3
–55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.8
40
°C/W
Device Marking
FDD4685
Device
FDD4685
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
1
www.fairchildsemi.com


FDD4685 데이터시트, 핀배열, 회로
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = –250µA, VGS = 0V
ID = –250µA, referenced to 25°C
VDS = –32V, VGS = 0V
VGS = ±20V, VGS = 0V
–40
V
–33 mV/°C
–1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = –250µA
ID = –250µA, referenced to 25°C
VGS = –10V, ID = –8.4A
VGS = –4.5V, ID = –7A
VGS = –10V, ID = –8.4A, TJ=125°C
VDS = –5V, ID = –8.4A
–1
–1.6
4.9
23
30
33
23
–3 V
mV/°C
27
35 m
42
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = –20V, VGS = 0V,
f = 1MHz
f = 1MHz
1790
260
140
4
2380
345
205
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = –20V, ID = –8.4A
VGS = –10V, RGEN = 6
VDD =–20V, ID = –8.4A
VGS = –5V
8 16 ns
15 27 ns
34 55 ns
14 26 ns
19 27 nC
5.6 nC
6.1 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = –8.4A (Note 2)
IF = –8.4A, di/dt = 100A/µs
–0.85
30
31
–1.2
45
47
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V.
FDD4685 Rev.B
2 www.fairchildsemi.com




PDF 파일 내의 페이지 : 총 6 페이지

제조업체: Fairchild Semiconductor

( fairchild )

FDD4685 mosfet

데이터시트 다운로드
:

[ FDD4685.PDF ]

[ FDD4685 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FDD4685

P-Channel PowerTrench MOSFET - Fairchild Semiconductor



FDD4685_F085

P-Channel PowerTrench MOSFET - Fairchild Semiconductor