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STP11NC40FP 반도체 회로 부품 판매점

N-CHANNEL Power MOSFET



ST Microelectronics 로고
ST Microelectronics
STP11NC40FP 데이터시트, 핀배열, 회로
www.DataSheet4U.com
STP11NC40, STP11NC40FP
N-CHANNEL 400V - 0.44- 9.5A TO-220/TO-220FP
PowerMESH™II Power MOSFET
TYPE
VDSS RDS(on)
ID
STP11NC40
400 V < 0.55 9.5 A
STP11NC40FP 400 V < 0.55 9.5 A(*)
s TYPICAL RDS(on) = 0.44
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
Pw
120 W
30 W
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ORDERING INFORMATION
SALES TYPE
MARKING
STP11NC40
P11NC40
STP11NC40FP
P11NC40FP
PACKAGE
TO-220
TO-220FP
January 2002
PACKAGING
TUBE
TUBE
1/10


STP11NC40FP 데이터시트, 핀배열, 회로
STP11NC40, STP11NC40FP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD 9.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP11NC40
STP11NC40FP
400
400
± 30
9.5 9.5 (*)
6 6 (*)
38 38 (*)
120 30
0.96
0.24
3.5
- 2500
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.04
62.5
300
TO-220FP
4.1
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
9.5
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
400
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
234
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5 A
0.44 0.55
Unit
V
µA
µA
nA
V
2/10




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STP11NC40FP mosfet

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N-CHANNEL Power MOSFET - ST Microelectronics