|
SHANGHAI BELLING |
BLV2N60
N-channel Enhancement Mode Power MOSFET
• Avalanche Energy Specified
• Fast Switching
• Simple Drive Requirements
BVDSS
RDS(ON)
ID
600V
4.4Ω
2A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
Tj
TSDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current ( TC=100 oC)
Drain Current (pulsed)
(Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 30
2
1.26
8
23
0.18
40
2
2.3
-55 to +150
-55 to +150
Thermal Characteristics
Symbol
Rth j-c
Rth j-a
Parameter
Thermal Resistance, Junction to Case Max.
Thermal Resistance, Junction to Ambient Max.
http://www.belling.com.cn
-1-
Total 6 Pages
Value
5.5
62.5
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
oC
oC
Units
℃/ W
℃/ W
2008.08.08
BLV2N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol
BVDSS
∆BVDSS
/∆TJ
RDS(ON)
VGS(th)
g fs
IDSS
IGSS
Qg
Qgs
Qgd
t (on)
tr
t (off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
Reference to 25℃,
ID=250 uA
VGS=10V, ID=1A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance (note3) VDS=15V, ID=1A
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125℃
VDS=600V, VGS=0V
VDS=480V, VGS=0V
Gate-Source Leakage Current
VGS= ± 30V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V
ID=2A
VGS=10V
(note3)
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=300V
ID=2A
RG=25Ω
note3
(note3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f = 1MHz
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Units
- -V
0.6 - V/℃
- 4.4 Ω
- 4V
1.5 -
S
- 1 uA
- 100 uA
-
15.4
2
8.2
8.7
11.6
24.5
23.4
365
33
9.6
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
IS Continuous Source Diode Forward Current
-
-2
A
ISM Pulsed Source Diode Forward Current (note1)
-
-8
A
VSD Forward On Voltage
VGS=0V, IS=2A
-
- 1.8
V
t r r Reverse Recovery Time
VGS=0V, IS=2A(note3) -
360
-
ns
Qr r
Reverse Recovery Charge
dIF/dt =100A/us
- 1 - uC
Note:
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) L=25mH,Ias=1.7A,Vdd=50V,Rg=25Ω,staring Tj=25C
(3) Pulse width ≤ 300 us; duty cycle ≤ 2%
http://www.belling.com.cn
-2-
Total 6 Pages
2008.08.08
|