파트넘버.co.kr IRL1104 데이터시트 PDF


IRL1104 반도체 회로 부품 판매점

HEXFET Power MOSFET



International Rectifier 로고
International Rectifier
IRL1104 데이터시트, 핀배열, 회로
www.DataSheet4U.com
q Logic-Level Gate Drive
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Fully Avalanche Rated
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD -91805
IRL1104
HEXFET® Power MOSFET
D
VDSS = 40V
G RDS(on) = 0.008
S ID = 104A…
TO-220AB
Max.
104…
74
416
167
1.1
±16
340
62
17
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
0.9
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/19/99


IRL1104 데이터시트, 핀배열, 회로
IRL1104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
IDSS
Static Drain-to-Source On-Resis-
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– ––– V VGS = 0V, ID = 250µA
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008
––– ––– 0.012
VGS = 10V, ID = 62A „
VGS = 4.5V, ID = 52A „
1.0 ––– ––– V VDS = VGS, ID = 250µA
53 ––– ––– S VDS = 25V, ID = 62A
––– ––– 25
––– ––– 250
µA VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 68
ID = 62A
––– ––– 24
––– ––– 33
nC VDS = 32V
VGS = 4.5V, See Fig. 6 and 13 „
––– 18 –––
VDD = 20V
––– 257 –––
––– 32 –––
ns
ID = 62A
RG = 3.6, VGS = 4.5V
––– 64 –––
RD = 0.4, See Fig. 10 „
––– 4.5 –––
––– 7.5 –––
Between lead,
6mm (0.25in.)
nH from package
and center of die contact
––– 3445 –––
VGS = 0V
––– 1065 ––– pF VDS = 25V
––– 270 –––
ƒ = 1.0MHz, See Fig. 5
G
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 104…
MOSFET symbol
A showing the
––– ––– 416
integral reverse
p-n junction diode.
G
––– ––– 1.3
––– 84 126
––– 223 335
V TJ = 25°C, IS = 62A, VGS = 0V „
ns TJ = 25°C, IF = 62A
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 0.18mH
RG = 25, IAS =62A. (See Figure 12)
ƒ ISD 62A, di/dt 217A/µs, VDD V(BR)DSS,
TJ 175°C
2
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
www.irf.com




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IRL1104 mosfet

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