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H9435S 반도체 회로 부품 판매점

P-Channel Enhancement-Mode MOSFET



Hi-Sincerity Mocroelectronics 로고
Hi-Sincerity Mocroelectronics
H9435S 데이터시트, 핀배열, 회로
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H9435S
P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)
8-Lead Plastic SO-8
Package Code: S
Features
RDS(on)=60m@VGS=-10V, ID=-5.3A
RDS(on)=90m@VGS=-4.5V, ID=-4.2A
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
H9435S Symbol & Pin Assignment
54
6 3 Pin 1 / 2 / 3: Source
Pin 4: Gate
7 2 Pin 5 / 6 / 7 / 8: Drain
81
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
Tj, Tstg
RθJC
RθJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) *1
Total Power Dissipation @TA=25oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Ratings
-30
±20
-5.3
-20
2.5
-55 to +150
30
50
Units
V
V
A
A
W
°C
°C/W
°C/W
H9435S
DataSheet4 U .com
HSMC Product Specification


H9435S 데이터시트, 핀배열, 회로
www.DataSheet4U.com
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
gFS Forward Transconductance
Dynamic
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-off Delay Time
tf Turn-off Fall Time
Drain-Source Diode Characteristics
IS Maximum Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-4.2A
VGS=-10V, ID=-5.3A
VDS=VGS, ID=-250uA
VDS=-24V, VGS=0V
VGS=±20V, VDS=0V
VDS=-15V, ID=-5.3A
VDS=-15V, ID=-5.3A, VGS=-10V
VDS=-15V, VGS=0V, f=1MHz
VDD=10V, RL=15, ID=-1A,
VGEN=-10V, RG=6
VGS=0V, IS=-5.3A
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
Min. Typ. Max. Unit
30 - - V
- 82 90
m
- 50 60
-1 - -3 V
- - -1 uA
- - ±100 nA
47 - S
- 9.52 -
- 3.43 -
- 1.71 -
- 551.57 -
- 90.96 -
- 60.79 -
- 10.8 -
- 2.33 -
- 22.53 -
- 3.87 -
nC
PF
Ns
- - -1.9 A
- - -1.3 V
H9435S
DataSheet4 U .com
HSMC Product Specification




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P-Channel Enhancement-Mode MOSFET - Hi-Sincerity Mocroelectronics