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PDF STQ1NC45R-AP Data sheet ( Hoja de datos )
| Número de pieza | STQ1NC45R-AP | |
| Descripción | N-channel MOSFET | |
| Fabricantes | ST MICROELECTRONICS | |
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STD2NC45-1
STQ1NC45R-AP
N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92
SuperMESH™ Power MOSFET
General features
Type
STD2NC45-1
STQ1NC45R-AP
VDSS
450V
450V
RDS(on)
<4.5Ω
<4.5Ω
ID
1.5A
0.5A
Pw
30W
3.1W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ New high voltage benchmark
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
– Switch mode low power supplies (SMPS)
– Low power, low cost CFL (compact
fluorescent lamps)
– Low power battery chargers
IPAK
3
2
1
TO-92 (ammopak)
Internal schematic diagram
Order codes
Part number
STD2NC45-1
STQ1NC45R-AP
Marking
D2NC45
Q1NC45R
Package
IPAK
TO-92
Packaging
Tube
Ammopak
July 2006
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STD2NC45-1 - STQ1NC45R-AP
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Test condictions
VDD = 225V, ID = 0.5A
RG = 4.7Ω VGS = 10V
(see Figure 17)
VDD = 360V, ID = 1.5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min. Typ. Max. Unit
6.7 ns
4 ns
8.5 ns
12 ns
18 ns
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 1.5A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 1.5A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
1.5 A
6.0 A
1.6 V
225 ns
530 µC
4.7 A
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STD2NC45-1 - STQ1NC45R-AP
Package mechanical data
DIM.
A
A1
A3
B
B2
B3
B5
B6
C
C2
D
E
G
H
L
L1
L2
TO-251 (IPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.7
0.64
5.2
0.45
0.48
6
6.4
4.4
15.9
9
0.8
mm
TYP.
0.3
0.8
MAX.
2.4
1.1
1.3
0.9
5.4
0.85
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
MIN.
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
inch
TYP.
0.012
0.031
H
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
L2 D
L
L1
0068771-E
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| PDF Descargar | [ Datasheet STQ1NC45R-AP.PDF ] | |
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