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XN01872 반도체 회로 부품 판매점

Silicon n-channel enhancement MOSFET



Panasonic Semiconductor 로고
Panasonic Semiconductor
XN01872 데이터시트, 핀배열, 회로
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Composite Transistors
XN01872 (XN1872)
Silicon n-channel enhancement MOSFET
For switching
Features
Two elements incorporated into one package
(Source-coupled FETs)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SK0621 (2SK621) × 2
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain curennt
Peak drain current
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSO
ID
IDP
PT
Tch
Tstg
50
8
100
200
300
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
1: Drain (FET1)
2: Drain (FET2)
3: Gate (FET2)
EIAJ: SC-74A
4: Source
5: Gate (FET1)
Mini5-G1 Package
Marking Symbol: 5U
Internal Connection
34
5
FET2
FET1
Electrical Characteristics Ta = 25°C ± 3°C
21
Parameter
Symbol
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Output voltage high-level
Output voltage low-level
Input resistance *1
Turn-on time *2
Turn-off time *2
Short-circuit forward transfer capacitance
(Common-source)
VDSS
IDSS
IGSS
Vth
RDS(on)
Yfs
VOH
VOL
R1+R2
ton
toff
Ciss
Conditions
ID = 100 µA, VGS = 0
VDS = 10 V, VGS = 0
VGS = 8 V, VDS = 0
ID = 100 µA, VDS = VGS
ID = 20 mA, VGS = 5 V
ID = 20 mA, VDS = 5 V, f = 1 kHz
VDS = 5 V, VGS = 1 V, RL = 200
VDS = 5 V, VGS = 5 V, RL = 200
VDD = 5 V, VGS = 0 V to 5 V, RL = 200
VDD = 5 V, VGS = 5 V to 0 V, RL = 200
VDS = 5 V, VGS = 0, f = 1 MHz
Min
50
40
1.5
20
4.5
100
Typ Max
10
80
3.5
50
30
1.0
200
1.0
1.0
9 15
Unit
V
µA
µA
V
mS
V
V
k
µs
µs
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Resistance ratio R1 /R2 = 1/50
*2: Pulse measurement
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
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XN01872 데이터시트, 핀배열, 회로
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XN01872
PT Ta
500
400
300
200
100
0
0 40 80 120 160
Ambient temperature Ta (°C)
ID VDS
120
Ta = 25°C
100
VGS = 6.0 V
80
5.5 V
5.0 V
60
4.5 V
40
4.0 V
20 3.5 V
3.0 V
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
ID VGS
120
VDS = 5 V
100
80 Ta = −25°C
25°C
60 75°C
40
20
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
Yfs  VDS
50 VDS = 5 V
Ta = 25°C
40
30
20
10
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
1 000
100
VIN IO
VO = 1 V
Ta = 25°C
Ciss , Coss VDS
12 VGS = 0
f = 1 MHz
Ta = 25°C
10
Ciss
8
6
4
Coss
2
0
0.1 1 10 100
Drain-source voltage VDS (V)
RDS(on) VGS
120
ID = 20 mA
100
80
60
Ta = 75°C
40 25°C
25°C
20
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
10
1
0.1
0.1
1 10
Output current IO (mA)
100
2
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XN01872 mosfet

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Silicon n-channel enhancement MOSFET - Panasonic Semiconductor