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PDF AF8510C Data sheet ( Hoja de datos )
| Número de pieza | AF8510C | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Anachip | |
| Logotipo |  |
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AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Features
- Lower On-Resistance
- Simple Drive Requirement
- Fast Switching Performance
- Pb Free Plating Product
Product Summary
CH BVDSS (V) RDS(ON) (mΩ)
N 30
28
P -30
55
ID (A)
6.9
-5.3
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
costeffectiveness.
The SO-8 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applicat ions such as DC/DC
converters.
Pin Assignments
Pin Descriptions
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
Pin Name
S1
7 D1 DataSheet4U.com G1
D1
6 D2
S2
5 D2
G2
D2
Description
Source (NMOS)
Gate (NMOS)
Drain (NMOS)
Source (PMOS)
Gate (PMOS)
Drain (PMOS)
DataShee
Ordering information
A X 8510C X X
Feature
F :MOSFET
PN
Package
S: SOP-8
Packing
Blank : Tube or Bulk
A : Tape & Reel
DataSheet4U.comThis datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Nov 14, 2005
1/8
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AF8510C
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Typical Performance Characteristics (N-Channel) (Continued)
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Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
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Fig 9. Maximum Safe Operation Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
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5/8
Fig 12. Gate Charge Waveform
Rev. 1.0 Nov 14, 2005
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AF8510C.PDF ] | |
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