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PDF SUB75N08-09L Data sheet ( Hoja de datos )
| Número de pieza | SUB75N08-09L | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUP/SUB75N08-09L
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.009 @ VGS = 10 V
0.011 @ VGS = 4.5 V
ID (A)
"75 a
TO-220AB
D
TO-263
DRAIN connected to TAB
G
G DS
GD S
Top View
SUB75N08-09L
S
Top View
SUP75N08-09L
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
75
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
"75a
"66
"240
"75
280
250c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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New Product
SUP/SUB75N08-09L
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
90
75
60
45
30
15
0
0 25 50 75 100 125 150 175
TC – Ambient Temperature (_C)
Safe Operating Area
300
Limited
by rDS(on)
100
10 ms
100 ms
10
1
0.1
TC = 25_C
Single Pulse
1 10
VDS – Drain-to-Source Voltage (V)
1 ms
10 ms
100 ms
dc
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 DutyCycle=0.5www.DataSheet4U.com
0.2
0.1
0.1 0.05
0.02
0.01
10–5
Single Pulse
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
Document Number: 70870
S-60951—Rev. A, 26-Apr-99
www.vishay.com S FaxBack 408-970-5600
2-5
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