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SUB75P03-07 반도체 회로 부품 판매점

P-Channel MOSFET



Vishay Siliconix 로고
Vishay Siliconix
SUB75P03-07 데이터시트, 핀배열, 회로
SUB75P03-07, SUP75P03-07
Vishay Siliconix
P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
0.007 at VGS = - 10 V
0.010 at VGS = - 4.5 V
ID (A)a
± 75
± 75
TO-220AB
TO-263
FEATURES
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DRAIN connected to TAB
G DS
Top View
SUB75P03-07
GD S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263)
SUB75P03-07-E3 (TO-263, Lead (Pb)-free)
SUP75P03-07 (TO-220AB)
SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C)
Pulsed Drain Current
TC = 25 °C
TC = 125 °C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)c
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
Limit
± 20
- 75a
- 65
- 240
- 60
180
187d
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle 1 %.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10
Symbol
RthJA
RthJC
Limit
40
62.5
0.8
Unit
°C/W
www.vishay.com
1


SUB75P03-07 데이터시트, 핀배열, 회로
SUB75P03-07, SUP75P03-07
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 125 °C
VDS = - 30 V, VGS = 0 V, TJ = 175 °C
VDS = -5 V, VGS = - 10 V
VGS = - 10 V, ID = - 30 A
VGS = - 10 V, ID = - 30 A, TJ = 125 °C
VGS = - 10 V, ID = - 30 A, TJ = 175 °C
VGS = - 4.5 V, ID = - 20 A
VDS = - 15 V, ID = - 75 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = - 15 V, VGS = - 10 V, ID = - 75 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = - 15 V, RL = 0.2
ID - 75 A, VGEN = - 10 V, Rg = 2.5
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb (TC = 25 °C)
Continuous Current
IS
Pulsed Current
Forward Voltagea
ISM
VSD IF = - 75 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = - 75 A, dI/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min.
- 30
-1
- 120
20
Typ.
0.0055
0.008
9000
1565
715
160
32
30
25
225
150
210
- 1.2
55
2.5
0.07
Max.
-3
± 100
-1
- 50
- 250
0.007
0.010
0.013
0.010
240
40
360
240
340
- 75
- 240
- 1.5
100
5
0.25
Unit
V
nA
µA
A
S
pF
nC
ns
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71109
S10-2429-Rev. E, 25-Oct-10




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