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PDF SUB75P05-08 Data sheet ( Hoja de datos )
| Número de pieza | SUB75P05-08 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUP/SUB75P05-08
Vishay Siliconix
P-Channel 55-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
–55 0.008
ID (A)
–75a
TO-220AB
S
DRAIN connected to TAB
GD S
Top View
SUP75P05-08
TO-263
G DS
Top View
SUB75P05-08
G
D
P-Channel MOSFET
www.DataSheet4U.comABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 150_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 125_C (TO-263)c
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
–55
"20
–75a
–47
–240
–75
280
250d
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambient
PCB Mount (TO-263)c
Free Air (TO-220AB)
RthJA
RthJA
Junction-to-Case
RthJC
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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New Product
SUP/SUB75P05-08
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
90
Safe Operating Area
500
75 Limited
by rDS(on)
100
60
45
30 10
TC = 25_C
15 Single Pulse
0
0 25 50 75 100 125 150 175
TC – Case Temperature (_C)
1
0.1 1 10
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2 www.DataSheet4U.com
0.1
0.1 0.05
0.02
0.01
10–5
Single Pulse
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
10 ms
100 ms
1 ms
10 ms
100 ms
dc
100
3
Document Number: 70891
S-99404—Rev. B, 29-Nov-99
www.vishay.com S FaxBack 408-970-5600
2-5
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