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SUB85N04-04 반도체 회로 부품 판매점

N-Channel MOSFET



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Vishay Siliconix
SUB85N04-04 데이터시트, 핀배열, 회로
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SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.004 @ VGS = 10 V
ID (A)
85 a
TO-220AB
D
TO-263
DRAIN connected to TAB
G
GD S
Top View
Ordering Information
SUP85N04-04
SUP85N04-04—E3 (Lead (Pb)-Free)
G DS
Top View
Ordering Information
SUB85N04-04
SUB85N04-04—E3 (Lead (Pb)-Free)
S
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
85a
85a
240
70
211
250c
3.75
55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
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SUB85N04-04 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SUP/SUB85N04-04
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125_C
VDS = 40 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
40
2
120
0.0031
30
Input Capacitance
Ciss
7620
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1325
Reverse Transfer Capacitance
Crss
710
Total Gate Chargec
Qg
160
Gate-Source Chargec
www.DataSheet4U.comGate-Drain Chargec
Qgs VDS = 30 V, VGS = 10 V, ID = 85 A
Qgd
40
55
Turn-On Delay Timec
td(on)
20
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.47 W
ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W
115
75
Fall Timec
tf
85
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
ISM
VSD
trr
IRM(REC)
Qrr
IF = 85 A, VGS = 0 V
IF = 85 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
1.1
60
2.6
0.08
Max
4
100
1
50
250
0.004
0.0055
0.007
250
35
175
115
130
85
240
1.4
90
4
0.15
Unit
V
nA
mA
A
W
S
pF
nC
ns
A
V
ns
A
mC
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2
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.DataSheet4U.com




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