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SUB85N06-05 반도체 회로 부품 판매점

N-Channel MOSFET



Vishay Siliconix 로고
Vishay Siliconix
SUB85N06-05 데이터시트, 핀배열, 회로
www.DataSheet4U.com
New Product
SUP/SUB85N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.0052 @ VGS = 10 V
0.0072 @ VGS = 4.5 V
ID (A)
"85 a
TO-220AB
D
TO-263
DRAIN connected to TAB
GD S
Top View
SUP85N06-05
G DS
Top View
SUB85N06-05
G
S
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
"85a
"85a
"240
"75
280
250c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
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2-1
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SUB85N06-05 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SUP/SUB85N06-05
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V
VDS = 48 V, VGS = 0 V, TJ = 125_C
VDS = 48 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
60
1
120
0.0044
0.0059
30
Input Capacitance
Ciss
7560
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1050
Reverse Transfer Capacitance
Crss
570
Total Gate Chargec
www.DataSheet4U.comGate-Source Chargec
Qg
Qgs VDS = 30 V, VGS = 10 V, ID = 85 A
155
28
Gate-Drain Chargec
Qgd
44
Turn-On Delay Timec
td(on)
15
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.4 W
ID ^ 85 A, VGEN = 10 V, RG = 2.5 W
90
95
Fall Timec
tf
105
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 85 A, VGS = 0 V
IF = 85 A, di/dt = 100 A/ms
1.1
50
2.7
0.067
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Max
3
"100
1
50
250
0.0052
0.0072
0.0085
0.010
220
25
130
140
150
75
240
1.4
85
5
0.21
Unit
V
nA
mA
A
W
S
pF
nC
ns
A
V
ns
A
mC
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2-2
Document Number: 71113
S-20556Rev. C, 22-Apr-02
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