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SUB65P04-15 반도체 회로 부품 판매점

P-Channel MOSFET



Vishay Siliconix 로고
Vishay Siliconix
SUB65P04-15 데이터시트, 핀배열, 회로
www.DataSheet4U.com
New Product
SUP/SUB65P04-15
Vishay Siliconix
P-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.015 @ VGS = –10 V
–40
0.023 @ VGS = –4.5 V
TO-220AB
ID (A)
–65
–50
S
TO-263
G
DRAIN connected to TAB
G DS
Top View
GD S
Top View
SUP65P04-15
SUB65P04-15
D
P-Channel MOSFET
www.DataSheet4U.comABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)b
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
–40
"20
–65
–37
–240
–60
180
120c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. When mounted on 1” square PCB (FR-4 material).
c. See SOA curve for voltage derating.
PCB Mount (TO-263)b
Free Air (TO-220AB)
Document Number: 71174
S-00831—Rev. A, 01-May-00
Symbol
RthJA
RthJA
RthJC
Limit
40
62.5
1.25
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
www.DataSheet4U.com


SUB65P04-15 데이터시트, 핀배열, 회로
www.DataSheet4U.com
SUP/SUB65P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –40 V, VGS = 0 V
VDS = –40 V, VGS = 0 V, TJ = 125_C
VDS = –40 V, VGS = 0 V, TJ = 175_C
VDS = –5 V, VGS = –10 V
VGS = –10 V, ID = –30 A
VGS = –10 V, ID = –30 A, TJ = 125_C
VGS = –10 V, ID = –30 A, TJ = 175_C
VGS = –4.5 V, ID = –20 A
VDS = –15 V, ID = –50 A
–40
–1
–120
0.012
0.018
20
Input Capacitance
Ciss
5400
Output Capacitance
Coss
VGS = 0 V, VDS = –25 V, f = 1 MHz
Reversen Transfer Capacitance
Crss
Total Gate Chargec
www.DataSheet4U.comGate-Source Chargec
Qg
Qgs VDS = –20 V, VGS = –10 V, ID = –65 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = –20 V, RL = 0.3 W
ID ] –65 A, VGEN = –10 V, RG = 2.5 W
Fall Timec
tf
640
300
85
25
15
15
380
75
140
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = –65 A, VGS = 0 V
IF = –65 A, di/dt = 100 A/ms
–1.2
40
2.0
0.04
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Max Unit
–3
"100
–1
–50
–250
0.015
0.024
0.030
0.023
V
nA
mA
A
W
W
S
pF
130
nC
25
580
ns
115
210
–65
–240
–1.5
80
4
0.1
A
V
ns
A
mC
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 71174
S-00831—Rev. A, 01-May-00
www.DataSheet4U.com




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SUB65P04-15 mosfet

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