파트넘버.co.kr SUB40N06-25L 데이터시트 PDF


SUB40N06-25L 반도체 회로 부품 판매점

N-Channel MOSFET



Vishay Siliconix 로고
Vishay Siliconix
SUB40N06-25L 데이터시트, 핀배열, 회로
SUP/SUB4w0wNw.D0ata6Sh-ee2t4U5.cLom
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.022 @ VGS = 10 V
0.025 @ VGS = 4.5 V
ID (A)
40
40
TO-220AB
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP40N06-25L
G DS
Top View
SUB40N06-25L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 100_C
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)c
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
60
"20
40
25
100
40
80
90c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t v 10 sec.
PCB Mount (TO-263)c
Free Air (TO-220AB)
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
Symbol
RthJA
RthJC
Limit
40
80
1.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1


SUB40N06-25L 데이터시트, 핀배열, 회로
SUP/SUB40N06-25L
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 40 A
VDD = 30 V, RL = 0.8 W
ID ] 40 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 40 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.DataSheet4U.com
Min Typ Max Unit
60
V
1.0 2.0 3.0
"100
nA
1
50 mA
150
40 A
0.022
0.043
0.053
W
0.025
S
1800
350
100
40
9
10
10
9
28
7
60
20
20
50
15
pF
nC
ns
40
A
100
1.0 1.5 V
48 100 ns
6A
0.15
mC
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70288
S-57253—Rev. C, 24-Feb-98




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Vishay Siliconix

( vishay )

SUB40N06-25L mosfet

데이터시트 다운로드
:

[ SUB40N06-25L.PDF ]

[ SUB40N06-25L 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


SUB40N06-25L

N-Channel MOSFET - Vishay Siliconix



SUB40N06-25L

Logic Level - Vishay Siliconix