SUB15P01-52 반도체 회로 부품 판매점
P-Channel MOSFET
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 Vishay Siliconix |
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SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.052 @ VGS = –4.5 V
–8 0.070 @ VGS = –2.5 V
0.105 @ VGS = –1.8 V
ID (A)
–15
–10
–10.5
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G DS
Top View
GD S
D
Top View
SUB15P01-52
P-Channel MOSFET
SUP15P01-52 www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)c
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
–8
"8
–15
–8.7
–25
–10
5
25d
2.1
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Junction-to-Lead
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
PCB Mount (TO-263)c
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
Symbol
RthJA
RthJC
RthJL
Typical
58
5
16
Maximum
70
6
20
Unit
_C/W
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SUP/SUB15P01-52
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
rDS(on)
gfs
VGS = 0 V, ID = –250 mA
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "8 V
VDS = –6.4 V, VGS = 0 V
VDS = –6.4 V, VGS = 0 V, TJ = 125_C
VDS = –6.4 V, VGS = 0 V, TJ = 175_C
VDS = –5 V, VGS = –4.5 V
VDS = –5 V, VGS = –2.5 V
VGS = –4.5 V, ID = –10 A
VGS = –4.5 V, ID = –10 A, TJ = 125_C
VGS = –4.5 V, ID = –10 A, TJ = 175_C
VGS = –2.5 V, ID = –5 A
VGS = –1.8 V, ID = –2 A
VDS = –5 V, ID = –10 A
–8
–0.45
–25
–10
0.043
16
Input Capacitance
Output Capacitance
www.DataSheet4U.comCiss
Coss
VGS = 0 V, VDS = –4 V, f = 1 MHz
1300
430
Reversen Transfer Capacitance
Crss
245
Total Gate Chargec
Qg
10.5
Gate-Source Chargec
Gate-Drain Chargec
Qgs VDS = –4 V, VGS = –4.5 V, ID = –10 A
Qgd
1.6
2
Turn-On Delay Timec
td(on)
10
Rise Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
tf
VDD = –4 V, RL = 0.22 W
ID ] –15 A, VGEN = –4.5 V, RG = 2.5 W
16
30
25
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = –15 A, VGS = 0 V
IF = –15 A, di/dt = 100 A/ms
45
–1
0.023
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Max Unit
"100
–1
–50
–150
0.052
0.065
0.075
0.070
0.105
V
nA
mA
A
W
S
pF
15
nC
20
25
ns
45
40
–15
–25
–1.5
75
–1.5
0.056
A
V
ns
A
mC
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Document Number: 71085
S-20966—Rev. C, 01-Jul-02
www.DataSheet4U.com
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( vishay )
SUB15P01-52 mosfet
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