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STP10NB20FP 반도체 회로 부품 판매점

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET



ST Microelectronics 로고
ST Microelectronics
STP10NB20FP 데이터시트, 핀배열, 회로
( DataSheet : www.DataSheet4U.com )
STP10NB20
STP10NB20FP
N-CHANNEL 200V - 0.25 - 10A TO-220/TO-220FP
PowerMESH™ MOSFET
Table 1. General Features
Type
VDSS
RDS(on)
STP10NB20
200 V
< 0.40
STP10NB20FP 200 V
< 0.40
ID
10 A
6A
Figure 1. Package
FEATURES SUMMARY
TYPICAL RDS(on) = 0.25
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STP10NB20
STP10NB20FP
Marking
P10NB20
P10NB20FP
April 2004
www.DataSheet4U.com
Package
TO-220
TO-220FP
Packaging
TUBE
TUBE
REV.2
1/9
www.DataSheet4U.com


STP10NB20FP 데이터시트, 핀배열, 회로
STP10NB20/FP
Table 3. Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (cont.) at TC = 25 °C
ID Drain Current (cont.) at TC = 100 °C
IDM (1)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25 °C
Derating Factor
dv/dt (2) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Note: 1. Pulse width limited by safe operating area
2. ISD 7A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Table 4. Thermal Data
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 5. Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C; ID = IAR,; VDD = 50 V)
Value
STP10NB20 STP10NB20FP
200
200
± 30
10 6
64
40 40
85 30
0.68 0.24
5.5 5.5
- 2000
-65 to 150
Unit
V
V
V
A
A
A
W
W°/C
V/ns
V
°C
TO-220
1.47
Value
TO220-FP
4.17
62.5
300
Unit
°C/W
°C/W
°C
Max Value
10
150
Unit
A
mJ
2/9




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STP10NB20FP mosfet

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N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET - ST Microelectronics