STP10NK70ZFP 반도체 회로 부품 판매점
N-CHANNEL Power MOSFET
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 ST Microelectronics |
( DataSheet : www.DataSheet4U.com )
STP10NK70ZFP
STP10NK70Z
N-CHANNEL 700V - 0.75Ω - 8.6A - TO220-TO220FP
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STP10NK70Z 700 V <0.85 Ω
STP10NK70ZFP 700 V <0.85 Ω
ID
8.6 A
8.6 A
Pw
110 W
35 W
s EXTREMELY HIGH dv/dt CAPABILITY
s IMPROVED ESD CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
s HIGH CURRENT, HIGH SPEED SWITCHING
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
Internal schematic diagram
Sales Type
STP10NK70Z
STP10NK70ZFP
Marking
P10NK70Z
P10NK70ZFP
Package
TO-220
TO-220FP
Packaging
TUBE
TUBE
August 2005
www.DataSheet4U.com
Rev 2
1/13
wwwww.wD.astt.acoSmheet4U.1c3om
1 Electrical ratings
1 Electrical ratings
STP10NK70Z - STP10NK70ZFP
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20kΩ)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt
Note 1
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Table 2. Thermal data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Value
TO-220
TO-220FP
8.6
5.4
34
150
1.20
700
700
± 30
4000
8.6 (Note 3)
5.4 (Note 3)
34 (Note 3)
35
0.28
4.5
-- 2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
TO-220
0.83
62.5
TO-220FP
3.6
300
Unit
°C/W
°C/W
°C
Max Value
8.6
350
Unit
A
mJ
2/13
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제조업체: ST Microelectronics
( stm )
STP10NK70ZFP mosfet
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