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STU1030PL 반도체 회로 부품 판매점

P-Channel Enhancement Mode MOSFET



SamHop Microelectronics 로고
SamHop Microelectronics
STU1030PL 데이터시트, 핀배열, 회로
t4U.com S T U /D 1030P LSamHop Microelectronics Corp.
SheeP-C hannel E nhancement Mode MOS FE T
P reliminary May.28 2004
.DataPR ODUCT S UMMAR Y
wV DS S ID R DS (ON) ( m W ) Max
ww .com-30V
-18A
55 @ VGS = -10V
85 @ VGS = -4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
UD
t4G
S
eSDU SERIES
T O -252AA(D-P AK )
GDS
S DD S E R IE S
TO-251(l-P AK)
D
G
S
heABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
SP a ra meter
taDrain-S ource Voltage
S ymbol
VDS
Limit
30
Unit
V
aGate-S ource Voltage
VGS 20
V
.DDrain Current-Continuous a @ TJ=125 C
-P ulsed b
ID
IDM
18
45
A
A
w mDrain-S ource Diode Forward Current a
IS
20
A
w .coMaximum Power Dissipation a
PD 50 W
w t4UOperating Junction and S torage
eTemperature R ange
TJ, TSTG
-55 to 175
C
taSheTHE R MAL CHAR ACTE R IS TICS
aThermal R esistance, Junction-to-C ase
R JC
3 C/W
w.DThermal R esistance, Junction-to-Ambient
R JA
50
C /W
ww1


STU1030PL 데이터시트, 핀배열, 회로
S T U/D1030P L
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 20V, VDS =0V
V
-1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.8 -2.5 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS = -10V, ID =-5.3A
VGS = -4.5V, ID = -4.2A
45 55 m-ohm
70 85 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = -5V, VGS = -10V
VDS =-15V, ID = - 5.3A
-15
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
VDS =-15V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VD = -15V
tr
ID = -1A
VGEN = - 10V
tD(OFF) R GEN = 6 ohm
tf R L = 15 ohm
Total Gate Charge
Qg VDS =-15V,ID =-5.3A,VGS =-10V
VDS =-15V,ID =-5.3A,VGS =-4.5V
7
612
129
96
12.6
17.4
45.4
37
13
6.8
A
S
PF
PF
PF
ns
ns
ns
ns
nC
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =-15V, ID = -5.3A
Qgd VGS =-10V
2.7 nC
2.6 nC
2




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STU1030PL mosfet

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P-Channel Enhancement Mode MOSFET - SamHop Microelectronics