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IRF1010EZL 반도체 회로 부품 판매점

AUTOMOTIVE MOSFET



International Rectifier 로고
International Rectifier
IRF1010EZL 데이터시트, 핀배열, 회로
PD - 95483
IRF1010EZPbF
AUTOMOTIVE MOSFET IRF1010EZSPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free
G
IRF1010EZLPbF
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 8.5m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
TO-220AB
IRF1010EZ
ID = 75A
S
D2Pak
IRF1010EZS
TO-262
IRF1010EZL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Max.
84
60
75
340
140
Units
A
W
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
0.90
± 20
99
180
See Fig.12a,12b,15,16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
10 lbf•in (1.1N•m)
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
06/29/04


IRF1010EZL 데이터시트, 핀배열, 회로
IRF1010EZ/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 60
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
2.0
–––
0.058
6.8
–––
–––
–––
8.5
4.0
V
V/°C
m
V
VGS = 0V, ID = 250µA
fReference to 25°C, ID = 1mA
VGS = 10V, ID = 51A
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
200 ––– ––– S VDS = 25V, ID = 51A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 58 86 nC ID = 51A
Qgs Gate-to-Source Charge
––– 19 28
VDS = 48V
fQgd
Gate-to-Drain ("Miller") Charge
––– 21 32
VGS = 10V
td(on)
Turn-On Delay Time
––– 19 ––– ns VDD = 30V
tr Rise Time
––– 90 –––
ID = 51A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 38 –––
––– 54 –––
fRG = 7.95
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2810 –––
––– 420 –––
––– 200 –––
––– 1440 –––
––– 320 –––
––– 510 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 84
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– ––– 340
––– ––– 1.3
integral reverse
G
fp-n junction diode.
S
V TJ = 25°C, IS = 51A, VGS = 0V
trr Reverse Recovery Time
––– 41 62 ns TJ = 25°C, IF = 51A, VDD = 30V
fQrr Reverse Recovery Charge ––– 54 81 nC di/dt = 100A/µs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
… Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Limited by TJmax, starting TJ = 25°C, L = 0.077mH, † Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
RG = 25, IAS = 51A, VGS =10V. Part not
avalanche performance.
recommended for use above this value.
ƒ ISD 51A, di/dt 260A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
‡ This value determined from sample failure population. 100%
tested to this value in production.
ˆ This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2 www.irf.com




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IRF1010EZL mosfet

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