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RA07H0608M 반도체 회로 부품 판매점

MITSUBISHI RF MOSFET MODULE



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
RA07H0608M 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07H0608M
68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO
DESCRIPTION
The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
ηT>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW
• Broadband Frequency Range: 68-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07H0608M-E01
RA07H0608M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07H0608M
MITSUBISHI ELECTRIC
1/9
25 April 2003


RA07H0608M 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07H0608M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=68-88MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
16
6
50
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
f Frequency Range
68 88
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
— Stability
VDD=12.5V,VGG=5V, Pin=30mW
Pout=7W (VGG control),
VDD=12.5V,
Pin=30mW
7
38
-18
4:1
1
VDD=7.2-15.0V, Pin=15-50mW, Pout<8W (VGG control), No parasitic oscillation
Load VSWR=4:1
— Load VSWR Tolerance VDD=13.2V, Pin=30mW, Pout=7W (VGG control),
Load VSWR=20:1
No degradation or
destroy
UNIT
MHz
W
%
dBc
mA
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 07H0608M
MITSUBISHI ELECTRIC
2/9
25 April 2003




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RA07H0608M mosfet

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RA07H0608M

MITSUBISHI RF MOSFET MODULE - Mitsubishi Electric Semiconductor