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PDF 2SK0655 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0655 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Allowing to supply with the radial taping
4.0±0.2
2.0±0.2
unit: mm
0.75 max.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
50
8
100
200
200
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.45+–00.1.200
(2.5) (2.5)
0.45+–00.1.200
0.7±0.1
123
Internal Connection
G
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50 Ω
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20 35
mS
Input capacitance (Common Source) Ciss
10 15 pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1MHz
4 5 pF
Reverse transfer capacitance (Common Source) Crss
0.5 1 pF
Turn-on time
ton* VDD = 5V, VGS = 0 to 5V, RL = 200Ω
10
ns
Turn-off time
toff* VDD = 5V, VGS = 5 to 0V, RL = 200Ω
20
ns
* ton, toff measurement circuit
VGS = 5V
50Ω
Vout 200Ω
VDD = 5V
Vin
Vout
10%
90%
10%
90%
ton toff
Note) The part number in the parenthesis shows conventional part number.
283
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK0655.PDF ] | |
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