파트넘버.co.kr 2SK0664 데이터시트 PDF


2SK0664 반도체 회로 부품 판매점

Silicon N-Channel MOS FET



Panasonic Semiconductor 로고
Panasonic Semiconductor
2SK0664 데이터시트, 핀배열, 회로
Silicon MOS FETs (Small Signal)
2SK0664 (2SK664)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
50
8
100
200
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.3+00..01
3
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
unit: mm
0.15+00..0150
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 3N
Internal Connection
D
G
S
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS
VDS = 10V, VGS = 0
10 µA
Gate to Source leakage current IGSS
VGS = 8V, VDS = 0
50 µA
Drain to Source breakdown voltage VDSS
ID = 100µA, VGS = 0
50
V
Gate threshold voltage
Vth ID = 100µA, VDS = VGS
1.5
3.5 V
Drain to Source ON-resistance RDS(on) ID = 20mA, VGS = 5V
50
Forward transfer admittance
| Yfs |
ID = 20mA, VDS = 5V, f = 1kHz
20
mS
Input capacitance (Common Source) Ciss
15 pF
Output capacitance (Common Source) Coss
VDS = 5V, VGS = 0, f = 1kHz
5 pF
Reverse transfer capacitance (Common Source) Crss
1 pF
Turn-on time
ton* VDD = 5V, VGS = 0 to 5V, RL = 200
10
ns
Turn-off time
toff* VDD = 5V, VGS = 5 to 0V, RL = 200
20
ns
* ton, toff measurement circuit
Vout 200
90%
VGS = 5V
50
VDD = 5V
Vin
Vout
10%
10%
90%
ton toff
Note) The part number in the parenthesis shows conventional part number.
289


2SK0664 데이터시트, 핀배열, 회로
Silicon MOS FETs (Small Signal)
PD Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
ID VDS
120
Ta=25˚C
100
VGS=6.0V
5.5V
80
5.0V
60
4.5V
40
4.0V
20 3.5V
3.0V
0 2.5V
0 2 4 6 8 10 12
Drain to source voltage VDS (V)
Ciss, Coss, Crss VDS
12
VGS=0
f=1MHz
Ta=25˚C
10
Ciss
8
6
4
Coss
2
0 Crss
1 3 10 30 100
Drain to source voltage VDS (V)
ID VGS
120
VDS=5V
Ta=25˚C
100
Ta=25˚C
80
25˚C
60 75˚C
40
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
VIN IO
100 VO=5V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
2SK0664
| Yfs | VGS
60
VDS=5V
Ta=25˚C
50
40
30
20
10
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
RDS(on) VGS
120
ID=20mA
100
80
60
Ta=75˚C
40 25˚C
25˚C
20
0
0 2 4 6 8 10 12
Gate to source voltage VGS (V)
290




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: Panasonic Semiconductor

( panasonic )

2SK0664 mosfet

데이터시트 다운로드
:

[ 2SK0664.PDF ]

[ 2SK0664 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


2SK0662

Silicon N-Channel Junction FET - Panasonic Semiconductor



2SK0663

Silicon N-Channel Junction FET - Panasonic Semiconductor



2SK0664

Silicon N-Channel MOS FET - Panasonic Semiconductor



2SK0665

Silicon MOS FETs - Panasonic Semiconductor