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IRL3502 반도체 회로 부품 판매점

HEXFET Power MOSFET



International Rectifier 로고
International Rectifier
IRL3502 데이터시트, 핀배열, 회로
PRELIMINARY
l Advanced Process Technology
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD 9.1698A
IRL3502
HEXFET® Power MOSFET
D
VDSS = 20V
RDS(on) = 0.007
ID = 110A…
S
TO-220AB
Max.
110…
67
420
140
1.1
± 10
14
390
64
14
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.89
–––
62
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/17/97


IRL3502 데이터시트, 핀배열, 회로
IRL3502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
20 ––– ––– V
––– 0.019 ––– V/°C
––– ––– 0.008
––– ––– 0.007
0.70 ––– ––– V
77 ––– ––– S
––– ––– 25
µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 110
––– ––– 27 nC
––– ––– 39
––– 10 –––
––– 140 ––– ns
––– 96 –––
––– 130 –––
––– 4.5 –––
––– 7.5 –––
––– 4700 –––
––– 1900 –––
––– 640 –––
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 64A „
VGS = 7.0V, ID = 64A „
VDS = VGS, ID = 250µA
VDS = 10V, ID = 64A
VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
VGS = -10V
VGS = 10V
ID = 64A
VDS = 16V
VGS = 4.5V, See Fig. 6 „
VDD = 10V
ID = 64A
RG = 3.8Ω, VGS = 4.5V
RD = 0.15Ω, „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 15V
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 110…
––– ––– 420
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 64A, VGS = 0V „
––– 87 130 ns TJ = 25°C, IF = 64A
––– 200 310 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 190µH
RG = 25, IAS = 64A.
ƒ ISD 64A, di/dt 86A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4




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IRL3502 mosfet

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