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PDF STP140NF75 Data sheet ( Hoja de datos )
| Número de pieza | STP140NF75 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STP140NF75 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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STB140NF75 STP140NF75
STB140NF75-1
N-CHANNEL 75V - 0.0065 Ω -120A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
ID
STB140NF75
STP140NF75
STB140NF75-1
75 V
75 V
75 V
<0.0075 Ω
<0.0075 Ω
<0.0075 Ω
120 A(**)
120 A(**)
120 A(**)
s TYPICAL RDS(on) = 0.0065 Ω
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE 42V BATTERY DRIVERS
3
1
D2PAK
TO-263
(Suffix “T4”)
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB140NF75T4
STP140NF75
STB140NF75-1
MARKING
B140NF75
P140NF75
B140NF75
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
ID(**)
ID
IDM(•)
Ptot
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
December 2002
PACKAGE
D2PAK
TO-220
I2PAK
PACKAGING
TAPE & REEL
TUBE
TUBE
Value
75
75
± 20
120
100
480
310
2.08
10
750
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V
1/14
1 page  
Normalized Gate Threshold Voltage vs Temperature
STB140NF75 STP140NF75 STB150NF75-1
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.Power Derating vs Tc
.Max Id Current vs Tc.
5/14
5 Page 
DIM.
A
A1
B
B2
C
C2
D
e
E
L
L1
L2
STB140NF75 STP140NF75 STB150NF75-1
TO-262 (I2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.23
8.95
2.4
10
13.1
3.48
1.27
mm
TYP.
MAX.
4.6
2.69
0.93
1.7
0.6
1.36
9.35
2.7
10.4
13.6
3.78
1.4
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
L1
L2 D
L
P011P5/E
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STP140NF75.PDF ] | |
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