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STP14NF06 반도체 회로 부품 판매점

N-CHANNEL Power MOSFET



ST Microelectronics 로고
ST Microelectronics
STP14NF06 데이터시트, 핀배열, 회로
STP14NF06
N-CHANNEL 60V - 0.1- 14A TO-220
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP14NF10
60 V < 0.12
s TYPICAL RDS(on) = 0.1
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE AT 100 °C
s APPLICATION ORIENTED
CHARACTERIZATION
ID
14 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
December 2000
Value
Unit
60 V
60 V
±20 V
14 A
10 A
56 A
45 W
0.3 W/°C
6 V/ns
50 mJ
–65 to 175
°C
175
(1) ISD 7A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, ID = 114A, VDD = 15V
°C
1/8


STP14NF06 데이터시트, 핀배열, 회로
STP14NF06
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
3.33
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 7 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
0.10
Max.
0.12
Unit
V
14 A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 7 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
7
361
54
21
Max.
Unit
S
pF
pF
pF
2/8




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STP14NF06 mosfet

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STP14NF06

N-CHANNEL Power MOSFET - ST Microelectronics