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Power MOSFET |
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 9.1409A
IRFP048N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.016Ω
ID = 64A
S
TO-247AC
Max.
64
45
210
140
0.90
± 20
270
32
14
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
1.1
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97
IRFP048N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
55 ––– –––
––– 0.052 –––
––– ––– 0.016
2.0 ––– 4.0
22 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 89
––– ––– 20
––– ––– 39
––– 11 –––
––– 78 –––
––– 32 –––
––– 48 –––
––– 5.0 –––
––– 13 –––
––– 1900 –––
––– 620 –––
––– 270 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 37A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 32A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 32A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 32A
RG = 5.1Ω
RD = 0.85Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
94
360
Max.
45
210
1.3
140
540
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 37A, VGS = 0V
TJ = 25°C, IF = 32A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 530µH
RG = 25Ω, IAS = 32A. (See Figure 12)
ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ48N data and test conditions
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