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IRFP054V 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



Power MOSFET 로고
Power MOSFET
IRFP054V 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use
of TO-220 devices. The TO-247 is similar but superior to
the earlier TO-218 package because of its isolated
mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94110
IRFP054V
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 9.0m
ID = 93Aˆ
S
TO-247AC
Max.
93ˆ
66
360
180
1.2
± 20
90
18
4.7
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.24
–––
Max.
0.85
–––
40
Units
°C/W
1
3/30/01


IRFP054V 데이터시트, 핀배열, 회로
IRFP054V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
Conditions
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.066 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 9.0 mVGS = 10V, ID = 54A „‡
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
61 ––– ––– S VDS = 25V, ID = 54A„‡
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 170
––– ––– 39
––– ––– 59
––– 22 –––
ID = 64A
nC VDS = 48V
VGS = 10V, See Fig. 6 and 13‡
VDD = 30V
––– 160 ––– ns ID = 64A
––– 77 –––
RG = 6.2
––– 110 –––
VGS = 10V, See Fig. 10 „‡
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
D
S
––– 4080 –––
VGS = 0V
––– 840 –––
VDS = 25V
––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5‡
––– 1080…220† mJ IAS = 90A, L = 54µH‡
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 93ˆ A showing the
integral reverse
––– ––– 360
p-n junction diode.
G
D
S
––– ––– 1.2 V TJ = 25°C, IS = 90A, VGS = 0V „‡
––– 78 120 ns TJ = 25°C, IF = 64A
––– 250 380 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width 400µs; duty cycle 2%.
max. junction temperature. (See fig. 11)
… This is a typical value at device destruction and represents
‚
Starting TJ = 25°C, L = 54µH
RG = 25, IAS = 90A, VGS=10V (See Figure 12)
operation outside rated limits.
† This is a calculated value limited to TJ
= 175°C .
ƒ ISD 90A, di/dt 250A/µs, VDD V(BR)DSS,
TJ 175°C
‡ This is tested with same test conditions as the existing data sheet
ˆ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
2 www.irf.com




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IRFP054V mosfet

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