파트넘버.co.kr IRL2505 데이터시트 PDF


IRL2505 반도체 회로 부품 판매점

Power MOSFET ( Transistor )



International Rectifier 로고
International Rectifier
IRL2505 데이터시트, 핀배열, 회로
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 is universally preferred for all commercial-
Industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Juction-to-Ambient
www.irf.com
PD - 91325C
IRL2505
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.008
ID = 104A…
S
TO-220AB
Max.
104…
74
360
200
1.3
± 16
500
54
20
5.0
55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
11/19/01


IRL2505 데이터시트, 핀배열, 회로
IRL2505
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008
VGS = 10V, ID = 54A „
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.010 VGS = 5.0V, ID = 54A „
––– ––– 0.013
VGS = 4.0V, ID = 45A „
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
59 ––– ––– S VDS = 25V, ID = 54A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µ A VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg Total Gate Charge
––– ––– 130
ID = 54A
Qgs Gate-to-Source Charge
––– ––– 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 67
VGS = 5.0V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 160 –––
––– 43 –––
ns ID = 54A
RG = 1.3Ω, VGS = 5.0V
tf Fall Time
––– 84 –––
RD = 0.50Ω, See Fig. 10 „
LS Internal Source Inductance
––– 7.5 –––
Between lead,
nH and center of die contact
Ciss Input Capacitance
––– 5000 –––
VGS = 0V
Coss Output Capacitance
––– 1100 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
––– ––– 104…
A
––– ––– 360
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V „
––– 140 210 ns TJ = 25°C, IF = 54A
––– 650 970 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25, IAS = 54A. (See Figure 12)
ƒ ISD 54A, di/dt 230A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
2 www.irf.com




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IRL2505 mosfet

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