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International Rectifier |
PD - 9.1360
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
IRL2703S
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.04Ω
S ID = 24A
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D 2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Max.
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
300 (1.6mm from case)
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/96
IRL2703S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
30 ––– ––– V
––– 0.030 ––– V/°C
––– ––– 0.040 Ω
––– ––– 0.060
1.0 ––– ––– V
6.4 ––– ––– S
––– ––– 25
µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 15
––– ––– 4.6 nC
––– ––– 9.3
––– 8.5 –––
––– 140 –––
ns
––– 12 –––
––– 20 –––
LS Internal Source Inductance
––– 7.5 ––– nH
Ciss Input Capacitance
––– 450
Coss Output Capacitance
––– 210
Crss Reverse Transfer Capacitance
––– 110
Source-Drain Ratings and Characteristics
–––
–––
–––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 14A
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS = -16V
ID = 14A
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13
VDD = 15V
ID = 14A
RG = 12Ω, VGS = 4.5V
RD = 1.0Ω, See Fig. 10
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 96
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V
––– 65 97 ns TJ = 25°C, IF = 14A
––– 140 210 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 570µH
RG = 25Ω, IAS = 14A. (See Figure 12)
ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL2703 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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