파트넘버.co.kr IRL2703S 데이터시트 PDF


IRL2703S 반도체 회로 부품 판매점

HEXFET Power MOSFET



International Rectifier 로고
International Rectifier
IRL2703S 데이터시트, 핀배열, 회로
PD - 9.1360
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
IRL2703S
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.04
S ID = 24A
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D 2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Max.
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
300 (1.6mm from case)
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/96


IRL2703S 데이터시트, 핀배열, 회로
IRL2703S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
30 ––– ––– V
––– 0.030 ––– V/°C
––– ––– 0.040
––– ––– 0.060
1.0 ––– ––– V
6.4 ––– ––– S
––– ––– 25
µA
––– ––– 250
––– ––– 100
nA
––– ––– -100
––– ––– 15
––– ––– 4.6 nC
––– ––– 9.3
––– 8.5 –––
––– 140 –––
ns
––– 12 –––
––– 20 –––
LS Internal Source Inductance
––– 7.5 ––– nH
Ciss Input Capacitance
––– 450
Coss Output Capacitance
––– 210
Crss Reverse Transfer Capacitance
––– 110
Source-Drain Ratings and Characteristics
–––
–––
–––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA…
VGS = 10V, ID = 14A „
VGS = 4.5V, ID = 12A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 14A…
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 16V
VGS = -16V
ID = 14A
VDS = 24V
VGS = 4.5V, See Fig. 6 and 13 „…
VDD = 15V
ID = 14A
RG = 12Ω, VGS = 4.5V
RD = 1.0Ω, See Fig. 10 „…
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5…
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 24
––– ––– 96
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „
––– 65 97 ns TJ = 25°C, IF = 14A
––– 140 210 nC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 15V, starting TJ = 25°C, L = 570µH
RG = 25, IAS = 14A. (See Figure 12)
ƒ ISD 14A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Uses IRL2703 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.




PDF 파일 내의 페이지 : 총 9 페이지

제조업체: International Rectifier

( ir )

IRL2703S mosfet

데이터시트 다운로드
:

[ IRL2703S.PDF ]

[ IRL2703S 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


IRL2703

HEXFET Power MOSFET - International Rectifier



IRL2703PBF

HEXFET Power MOSFET - International Rectifier



IRL2703S

HEXFET Power MOSFET - International Rectifier