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PDF FQD3N50C Data sheet ( Hoja de datos )
| Número de pieza | FQD3N50C | |
| Descripción | 500V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQD3N50C/FQU3N50C
500V N-Channel MOSFET
Features
• 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability
QFET®
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
D{
GS
D-PAK
FQD Series
GDS
Absolute Maximum Ratings
I-PAK
FQU Series
G{
●
◀▲
●
●
{
S
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD3N50C/FQU3N50C
500
2.5
1.5
10
± 30
200
2.5
3.5
4.5
35
0.28
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
--
--
--
Max
3.5
50
110
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FQD3N50C/FQU3N50C Rev. A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
12V
10V
50KΩ
200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
Qg
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FQD3N50C/FQU3N50C Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FQD3N50C.PDF ] | |
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