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STD10NF06L 반도체 회로 부품 판매점

N-CHANNEL POWER MOSFET



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ST Microelectronics
STD10NF06L 데이터시트, 핀배열, 회로
STD10NF06L
N-CHANNEL 60V - 0.1- 10A DPAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD10NF06L
60V <0.1210A
s TYPICAL RDS(on) = 0.1
s SURFACE-MOUNTING DPAK (TO-252) POWER
PACKAGE IN TAPE & REEL (SUFFIX “T4”)
3
1
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFETprocess has specifically been de-
signed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC con-
verters for Telecom and Computer applications. It is
also intended for any applications with low gate drive
requirements.
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID
IDM (l)
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Value
60
60
± 15
10
7
40
30
0.2
30
50
– 55 to 175
(1) ISD 10A, di/dt 400A/µs, VDD =48V, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 7A, VDD=20 V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
November 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/7


STD10NF06L 데이터시트, 핀배열, 회로
STD10NF06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
5
100
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5 A
VGS = 5 V, ID = 5 A
Min.
1
Typ.
0.1
0.12
Max.
0.12
0.14
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =15 V , ID =10A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
6
346
54
22
Max.
Unit
S
pF
pF
pF
2/7




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N-CHANNEL POWER MOSFET - ST Microelectronics