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TMOS MOSFET 5.8 AMPERES 20 VOLTS



Motorola Semiconductors 로고
Motorola Semiconductors
MMSF4N01HD 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF4N01HD/D
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single N-Channel
Field Effect Transistors
MiniMOSdevices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
G
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Ideal for Synchronous Rectification
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MMSF4N01HD
Motorola Preferred Device
TMOS MOSFET
5.8 AMPERES
20 VOLTS
RDS(on) = 0.045 OHM
D
CASE 751–05, Style 13
SO–8
S
N–C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ TA = 25°C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
20
20
± 8.0
5.8
4.5
50
2.5
– 55 to 150
50
260
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
DEVICE MARKING
S4N01
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF4N01HDR2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
1


MMSF4N01HD 데이터시트, 핀배열, 회로
MMSF4N01HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
See Figure 8
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 )
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 )
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
Min
20
0.6
3.0
Typ Max Unit
Vdc
——
2.0 — mV/°C
µAdc
— 1.0
— 10
— 100 nAdc
0.8
2.8
0.035
0.043
6.0
1.1
0.045
0.055
Vdc
mV/°C
Ohm
mhos
425 595
270 378
115 230
pF
13 26 ns
60 120
20 40
29 58
10 20
42 84
24 48
28 56
9.2 13 nC
1.3 —
3.5 —
3.0 —
0.95
0.78
38
17
22
0.028
1.1
Vdc
ns
µC
2 Motorola TMOS Power MOSFET Transistor Device Data




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TMOS MOSFET 5.8 AMPERES 20 VOLTS - Motorola Semiconductors