JX2N7227 반도체 회로 부품 판매점

JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS



Advanced Power Technology 로고
Advanced Power Technology
JX2N7227 데이터시트, 핀배열, 회로
D
G
S
TO-254
POWER MOS IVTM
2N7227 400 Volt 0.315
JX2N7227*
JV2N7227*
*QUALIFIED TO MIL-S-19500/592 31/7/92
JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
2N7227
UNIT
VDSS
VGS
ID
IDM
IAR
PD
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Avalanche Current 1
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 100°C
Linear Derating Factor
400
Volts
±20
14
9
Amps
56
14
150
Watts
60
1.2 W/K
EAS
EAR
TJ,TSTG
TL
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering Conditions: 0.063" from Case for 10 Sec.
700
15
-55 to 150
300
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 250µA)
IDSS
IGSS
ID(ON)
RDS(ON)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 9.0A)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 9.0A, TC = 125°C)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 14.0A)
400
2
14
4
25
250
±100
Volts
µA
nA
Amps
0.315
0.680 Ohms
0.415
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61

JX2N7227 데이터시트, 핀배열, 회로
DYNAMIC CHARACTERISTICS
Symbol Characteristic
CDC
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
f = 1 MHz
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 2.35
2N7227
MIN TYP MAX UNIT
12
2400
385
160
100
12
41
12
18
40
13
24
2800
540
240
150
24
65
35
190
170
130
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])
t rr Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Q rr Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
MIN TYP MAX UNIT
14
Amps
56
1.7 Volts
279 1200 ns
3.6 9.0 µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX
RθJC
RθJA
Junction to Case
Junction to Ambient
0.83
31
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
UNIT
K/W 3
1.0
0.5 D=0.5
0.2
0.1
0.05
0.1
0.05
0.01
0.02
0.01
SINGLE PULSE
Note:
t1
0.005
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION




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JX2N7227 mosfet

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JX2N7227

JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS - Advanced Power Technology



JX2N7228

JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS - Advanced Power Technology