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FS100SMJ-03
MITSUBISHI Nch POWER MOSFET
FS100SMJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
15.9MAX.
r
f 3.2
Dimensions in mm
4.5
1.5
2
1.0
q we
5.45 5.45
G
0.6
4.4
2.8
¡4V DRIVE
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................ 4.7mΩ
¡ID ...................................................................................... 100A
¡Integrated Fast Recovery Diode (TYP.) .......... 100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
4
wr
q GATE
q w DRAIN
e SOURCE
r DRAIN
e
TO-3P
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Conditions
Ratings
30
±20
100
400
100
100
400
150
–55 ~ +150
–55 ~ +150
4.8
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100SMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 50A, VGS = 10V
ID = 50A, VGS = 4V
ID = 50A, VGS = 10V
ID = 50A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50Ω
IS = 50A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –50A/µs
Limits
Unit
Min. Typ. Max.
30 — — V
—
—
±0.1
µA
— — 0.1 mA
1.0 1.5 2.0 V
— 3.5 4.7 mΩ
— 4.7 8.0 mΩ
— 0.175 0.235 V
— 80 — S
— 8000 — pF
— 2250 — pF
— 1300 — pF
— 55 — ns
— 190 — ns
— 800 — ns
— 470 — ns
— 1.0 1.5 V
— — 0.83 °C/W
— 100 — ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
250
200
150
100
50
0
0 50 100 150 200
MAXIMUM SAFE OPERATING AREA
5
3 tw = 10ms
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
TC = 25°C
Single Pulse
5 7 100 2 3
100ms
1ms
10ms
DC
5 7 101 2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
100
VGS = 10V
80 6V
5V
4V
TC = 25°C
Pulse Test
3V
60
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 10V
6V
40 5V
4V 3V
30
40
20 2V
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
20 2V
10
TC = 25°C
Pulse Test
0
0 0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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