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MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
RA13H4047M-01 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA13H4047M
400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA13H4047M is a 13-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 400- to
470-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>13W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
ORDERING INFORMATION:
ORDER NUMBER
RA13H4047M-E01
RA13H4047M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA13H4047M
MITSUBISHI ELECTRIC
1/9
24 April 2003


RA13H4047M-01 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA13H4047M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<5V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=400-470MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
6
100
20
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
VDD=12.5V
VGG=5V
Pin=50mW
IGG Gate Current
— Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<20W (VGG control), Load VSWR=3:1
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=13W (VGG control),
Load VSWR=20:1
400 470
13
40
-30
3:1
1
No parasitic oscillation
MHz
W
%
dBc
mA
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA13H4047M
MITSUBISHI ELECTRIC
2/9
24 April 2003




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RA13H4047M-01 mosfet

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RA13H4047M-01

MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO - Mitsubishi Electric Semiconductor