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RA07M2127M-01 반도체 회로 부품 판매점

MITSUBISHI RF MOSFET MODULE



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
RA07M2127M-01 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07M2127M
215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07M2127M is a 7-watt RF MOSFET Amplifier Module
for 7.2-volt portable radios that operate in the 215- to 270-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=7.2V, VGG=0V)
• Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=20mW
ηT>45% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 215-270MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07M2127M-E01
RA07M2127M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07M2127M
MITSUBISHI ELECTRIC
1/9
25 April 2003


RA07M2127M-01 데이터시트, 핀배열, 회로
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<3.5 V
VGG Gate Voltage
VDD<7.2V, Pin=0mW
Pin Input Power
Pout Output Power
f=215-270MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
MITSUBISHI RF POWER MODULE
RA07M2127M
RATING
9.2
4
30
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
f Frequency Range
215 270
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
— Stability
VDD=7.2V,VGG=3.5V, Pin=20mW
Pout=6.5W (VGG control),
VDD=7.2V,
Pin=20mW
VDD=4.0-9.2V, Pin=10-30mW, Pout<8W (VGG control),
Load VSWR=4:1
7
45
-25
4:1
1
No parasitic oscillation
— Load VSWR Tolerance VDD=9.2V, Pin=20mW, Pout=7W (VGG control),
Load VSWR=20:1
No degradation or
destroy
UNIT
MHz
W
%
dBc
mA
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 07M2127M
MITSUBISHI ELECTRIC
2/9
25 April 2003




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RA07M2127M-01 mosfet

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MITSUBISHI RF MOSFET MODULE - Mitsubishi Electric Semiconductor