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PDF RF1S9540SM Data sheet ( Hoja de datos )
| Número de pieza | RF1S9540SM | |
| Descripción | 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRF9540, RF1S9540SM
July 1999 File Number 2282.6
19A, 100V, 0.200 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. They can be operated directly from
integrated circuits.
Formerly Developmental Type TA17521.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9540
TO-220AB
IRF9540
RF1S9540SM
TO-263AB
RF1S9540
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
Features
• 19A, 100V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-15
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRF9540, RF1S9540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
1.15
ID = 250µA
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12 TJ = -55oC
9
TJ = 25oC
6 TJ = 125oC
3
0
0 -20 -40 -60 -80 -100
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
2000
1600
1200
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
800
COSS
400 CRSS
0
0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
TJ = 25oC
10
1
0.1
0.4
0.6 0.8 1.0 1.2 1.4 1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -19A
-5
-10 VDS = -20V
VDS = -50V
VDS = -80V
0 20 40 60 80
Qg(TOT), GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-19
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RF1S9540SM.PDF ] | |
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