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Número de pieza | RF1S70N03 | |
Descripción | N-Channel Power MOSFETs | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF1S70N03 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RFP70N03, RF1S70N03, RF1S70N03SM
Data Sheet
January 2002
70A, 30V, 0.010 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49025.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP70N03
TO-220AB
RFP70N03
RF1S70N03
TO-262AA
F1S70N03
RF1S70N03SM
TO-263AB
F1S70N03
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Features
• 70A, 30V
• rDS(ON) = 0.010Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFP70N03, RF1S70N03, RF1S70N03SM Rev. C
1 page RFP70N03, RF1S70N03, RF1S70N03SM
Typical Performance Curves (Continued)
30.0
22.5
VDD = BVDSS
VDD = BVDSS
10.0
7.5
15.0
0.75BVDSS
0.75BVDSS
0.50BVDSS
0.50BVDSS
7.5
0.25BVDSS
0.25BVDSS
RL = 0.43Ω
Ig(REF) = 3.0mA
VGS = 10V
0
20 I-I-gg----((--AR----CE----F-T---)-)
t, TIME (µs)
80 -II-gg----((--AR----CE----F-T---)-)
5.0
2.5
0
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 12. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
tAV
VDS
VDD
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
VGS
RGS
RL
DUT
+
VDD
-
FIGURE 15. SWITCHING TIME TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 16. SWITCHING WAVEFORMS
RFP70N03, RF1S70N03, RF1S70N03SM Rev. C
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RF1S70N03.PDF ] |
Número de pieza | Descripción | Fabricantes |
RF1S70N03 | N-Channel Power MOSFETs | Fairchild Semiconductor |
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RF1S70N03SM | N-Channel Power MOSFETs | Fairchild Semiconductor |
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