|
Fairchild Semiconductor |
SEMICONDUCTOR
RFG60P03, RFP60P03,
RF1S60P03, RF1S60P03SM
December 1995
60A, 30V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Features
• 60A, 30V
• rDS(ON) = 0.027Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
Description
The RFG60P03, RFP60P03, RF1S60P03 and
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG60P03
TO-247
RFG60P03
RFP60P03
TO-220AB
RFP60P03
RF1S60P03
TO-262AA
F1S60P03
RF1S60P03SM
TO-263AB
F1S60P03
NOTE: When ordering use the entire part number.
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
Formerly developmental type TA49045.
Symbol
G
D
S
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
RFG60P03, RFP60P03,
RF1S60P03, RFS60P03SM
-30
-30
±20
60
Refer to Peak Current Curve
Refer to UIS Curve
176
1.17
-55 to +175
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
4-51
File Number 3951.1
Specifications RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified.
PARAMETERS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(-10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -30V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±20V
ID = 60A, VGS = -10V
VDD = -15V, ID = 60A
RL = 0.25Ω, VGS = -10V
RGS = 2.5Ω
VGS = 0 to -20V
VGS = 0 to -10V
VDD = -24V,
ID = 60A,
RL = 0.4Ω
VGS = 0 to -2V
VDS = -25V, VGS = 0V
f = 1MHz
MIN TYP MAX UNITS
-30 - - V
-2 - -4 V
- - -1 µA
- - -50 µA
- - 100 nA
-
-
0.027
Ω
- - 140 ns
- 20 - ns
- 75 - ns
- 35 - ns
- 40 - ns
- - 115 ns
-
190 230
nC
-
100 120
nC
- 7.5 9 nC
- 3000 -
pF
- 1500 -
pF
- 525 -
pF
- - 0.85 oC/W
- - 80 oC/W
Source-Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD ISD = -60A
tRR ISD = -60A, dISD/dt = -100A/µs
MIN TYP MAX UNITS
-
- -1.75
V
-
- 200
ns
4-52
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