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Número de pieza | RF1S45N02LSM | |
Descripción | 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RF1S45N02LSM (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! May 1997
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
Features
• 45A, 20V
• rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N02L
TO-220AB
FP45N02L
RF1S45N02L
TO-262AA
F45N02L
RF1S45N02LSM
TO-263AB
F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4342
1 page RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves (Continued)
2.0 2.0
VGS = VDS, ID = 250µA
ID = 250µA
1.5 1.5
1.0 1.0
0.5 0.5
0
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2500
2000
VGS = 0V, f = 1MHz
1500
1000
500
CISS
COSS
CRSS
0
0 5 10 15 20
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
VDD = BVDSS
VDD = BVDSS
5.00
15 RL = 0.44Ω
IG(REF) = 0.5mA
VGS = 5V
10 PLATEAU VOLTAGES IN
DESCENDING ORDER:
VDD = BVDSS
5
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
3.75
2.50
1.25
00
20 I-I-GG-----((--AR----CE----FT----))
t, TIME (µs)
80 I-I-GG-----((--AR----CE----FT----))
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RF1S45N02LSM.PDF ] |
Número de pieza | Descripción | Fabricantes |
RF1S45N02LSM | 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs | Intersil Corporation |
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