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RF1S30P05SM 반도체 회로 부품 판매점

30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs



Intersil Corporation 로고
Intersil Corporation
RF1S30P05SM 데이터시트, 핀배열, 회로
RFG30P05, RFP30P05, RF1S30P05SM
Data Sheet
July 1999 File Number 2436.4
30A, 50V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.
Formerly developmental type TA09834.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P05
TO-247
RFG30P05
RFP30P05
TO-220AB
RFP30P05
RF1S30P05SM
TO-263AB
F1S30P05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 30A, 50V
• rDS(ON) = 0.065
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-126
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


RF1S30P05SM 데이터시트, 핀배열, 회로
RFG30P05, RFP30P05, RF1S30P05SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFG30P05, RFP30P05
RF1S30P05SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
-50
-50
±20
30
Refer to Peak Current Curve
120
0.8
V
V
V
A
W
W/oC
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Refer to UIS Curve
-55 to 175
300
260
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
t(ON)
td(ON)
tr
td(OFF)
tf
t(OFF)
Qg(TOT)
Qg(-10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, TC = 150oC
VGS = ±20V
ID = 30A, VGS = -10V (Figure 9)
VDD = -25V, ID = 15A,
RL = 1.67, VGS = -10V,
RG = 6.25
(Figure 13)
VGS = 0 to -20V
VGS = 0 to -10V
VGS = 0 to -2V
VDD = -40V,
ID = 30A, RL = 1.33Ω,
IG(REF) = 1.6mA
VDS = -25V, VGS = 0V
f = 1MHz
(Figure 12)
TO-220, TO-263
TO-247
MIN TYP MAX UNITS
-50 - - V
-2 - -4 V
- - -1 µA
- - -25 µA
- - ±100 nA
-
-
0.065
- - 80 ns
- 15 - ns
- 23 - ns
- 28 - ns
- 18 - ns
- - 100 ns
-
140 170
nC
- 70 85 nC
- 5.5 6.6 nC
- 3200 -
pF
- 800 -
pF
- 175 -
pF
- - 1.25 oC/W
- - 62 oC/W
- - 30 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Note 2)
VSD
ISD = -30A
- - -1.5
Reverse Recovery Time
trr ISD = -30A, dISD/dt = -100A/µs
- - 150
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
4-127




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RF1S30P05SM mosfet

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30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs - Intersil Corporation