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PDF RF1K49211 Data sheet ( Hoja de datos )
| Número de pieza | RF1K49211 | |
| Descripción | 7A/ 12V/ 0.020 Ohm/ Logic Level/ Single N-Channel LittleFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
January 2002
RF1K49211
7A, 12V, 0.020 Ohm, Logic Level, Single
N-Channel LittleFET™ Power MOSFET
The RF1K49211 Single N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It was designed for
use in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low-voltage bus
switches. This product achieves full-rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.
Formerly developmental type TA49211.
Ordering Information
PART NUMBER
RF1K49211
PACKAGE
MS-012AA
BRAND
RF1K49211
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4921196.
Features
• 7A, 12V
• rDS(ON) = 0.020Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
DRAIN(7)
DRAIN(6)
DRAIN(5)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
©2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
1 page  
RF1K49211
Typical Performance Curves (Continued)
1.2
VGS = VDS, ID = 250µA
1.2
ID = 250µA
1.1
1.0
1.0
0.8
0.9
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
350 0
3000
2500
2000
1500
1000
500
0
0
COSS
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
CRSS
2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
12
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
0.8
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
12
VDD = BVDSS
9
VDD = BVDSS
5.00
3.75
RL = 1.71Ω
6 IG(REF) = 0.75mA 2.50
VGS = 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
3 VDD = BVDSS
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
0
1.25
0
20 -I-G-----(--R----E----F----)
IG(ACT)
t, TIME (µs)
80 -I-G-----(--R----E----F----)
IG(ACT)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RF1K49211 Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RF1K49211.PDF ] | |
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