파트넘버.co.kr RF1K49154 데이터시트 PDF


RF1K49154 반도체 회로 부품 판매점

2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET



Intersil Corporation 로고
Intersil Corporation
RF1K49154 데이터시트, 핀배열, 회로
Data Sheet
RF1K49154
October 1999 File Number 4143.3
2A, 60V, 0.130 Ohm, Dual N-Channel,
LittleFET™ Power MOSFET
This Dual N-Channel power MOSFET is manufactured using
the latest manufacturing process technology. This process,
which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. These devices can be operated directly from
integrated circuits.
Formerly developmental type TA49154.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49154
MS-012AA
RF1K49154
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4915496.
Features
• 2A, 60V
• rDS(ON) = 0.130
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.


RF1K49154 데이터시트, 핀배열, 회로
RF1K49154
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20k, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Drain Current Continuous (Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
RF1K49154
60
60
±20
2
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
VGS(TH)
ID = 250µA, VGS = 0V, (Figure 12)
VGS = VDS, ID = 250µA, (Figure 11)
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = ±20V
ID = 2A, VGS = 10V, (Figures 9, 10)
VDD = 30V, ID 2A,
RL = 15, VGS = 10V,
RGS = 25
(Figure 14)
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
CISS
COSS
CRSS
RθJA
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 48V,
ID = 2A,
RL = 24
(Figure 14)
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 13)
Pulse Width = 1s
Device Mounted on FR-4 Material
MIN TYP MAX UNITS
60 - - V
2 - 4V
- - 1 µA
- - 250 µA
- - ±10 µA
-
-
0.130
- - 50 ns
- 10 - ns
- 25 - ns
- 70 - ns
- 35 - ns
- - 155 ns
- 26 32 nC
- 14 17 nC
- 0.8 1.0 nC
- 340 -
pF
- 140 -
pF
- 40 - pF
-
-
62.5
oC/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
VSD
ISD = 2A
trr ISD = 2A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.5 V
- - 62 ns
2




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제조업체: Intersil Corporation

( intersil )

RF1K49154 mosfet

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