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PDF RF1K49154 Data sheet ( Hoja de datos )
| Número de pieza | RF1K49154 | |
| Descripción | 2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
January 2002
RF1K49154
2A, 60V, 0.130 Ohm, Dual N-Channel,
LittleFET™ Power MOSFET
This Dual N-Channel power MOSFET is manufactured using
the latest manufacturing process technology. This process,
which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. These devices can be operated directly from
integrated circuits.
Formerly developmental type TA49154.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49154
MS-012AA
RF1K49154
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4915496.
Features
• 2A, 60V
• rDS(ON) = 0.130Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
©2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
1 page  
RF1K49154
Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued)
1.5
ID = 250µA
500
1.25
400
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
300
1
COSS
200
0.75
100 CRSS
0.5
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
0
0 5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
60 10
45 7.5
VDD = BVDSS
RL = 30Ω
30
IG(REF) = 0.26mA
VGS = 10V
5
PLATEAU VOLTAGES IN
DESCENDING ORDER:
15 VDD = BVDSS
2.5
VDD = 0.75 BVDSS
VDD = 0.50 BVDSS
VDD = 0.25 BVDSS
00
20 -I-G-----(--R----E----F----) t, TIME (µs)
IG(ACT)
80 -I-G-----(--R----E----F----)
IG(ACT)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
tAV
VDS
VDD
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RF1K49154 Rev. B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RF1K49154.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RF1K49154 | 2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET | Fairchild Semiconductor |
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