RF1K49086 반도체 회로 부품 판매점
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
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 Fairchild Semiconductor |
Power MOSFET Data Sheets
SEMICONDUCTOR
RF1K49086
January 1997
3.5A, 30V, Avalanche Rated, Dual N-Channel
LittleFET™ Enhancement Mode Power MOSFET
Features
Description
• 3.5A, 30V
• rDS(ON) = 0.060Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
The RF1K49086 Dual N-Channel power MOSFET is manu-
factured using an advanced MegaFET process. This pro-
cess, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon, result-
ing in outstanding performance. It is designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from inte-
grated circuits.
Formerly developmental type TA49086.
RF1K49086
MS-012AA
RF1K49086
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4908696.
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
D2(6)
D2(5)
S2(3)
G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
3
4
5
LittleFET™ is a trademark of Harris Corporation
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
5-57
File Number 3986.4
RF1K49086
Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified
RF1K49086
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
30
30
±20
V
V
V
Continuous (Pulse Width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation
TA = 25oC . . .
Derate Above
.....
25oC.
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
3.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
260
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
CISS
COSS
CRSS
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 30V,
VGS = 0V
TA = 25oC
TA = 150oC
VGS = ±20V
ID = 3.5A
VGS = 10V
VGS = 4.5V
VDD = 15V, ID = 3.5A,
RL = 4.29Ω, VGS = 10V,
RGS = 25Ω
VGS = 0V to 20V
VGS = 0V to 10V
VDD = 24V,
ID = 3.5A,
RL = 6.86Ω
VGS = 0V to 2V
VDS = 25V, VGS = 0V,
f = 1MHz
Pulse Width = 1s
Device mounted on FR-4 material
30 - - V
1 - 3V
- - 1 µA
- - 50 µA
- - 100 nA
-
-
0.060
Ω
-
-
0.132
Ω
- - 50 ns
- 10 - ns
- 30 - ns
- 60 - ns
- 45 - ns
- - 130 ns
- 35 45 nC
- 13 17 nC
- 2.3 2.9 nC
- 575 -
pF
- 275 -
pF
- 100 -
pF
- - 62.5 oC/W
Source to Drain Diode Ratings and Specifications
PARAMETERS
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 3.5A
trr ISD = 3.5A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
- - 1.25 V
- - 45 ns
5-58
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RF1K49086 mosfet
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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관련 데이터시트
RF1K49086
3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET - Fairchild Semiconductor
RF1K49086
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RF1K49088
3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET - Fairchild Semiconductor
RF1K49088
3.5A/ 30V/ 0.06 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET - Intersil Corporation